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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2247 DESCRIPTION *High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) *High Switching Speed APPLICATIONS *Power switching *Power amplification *Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak w ww scs .i 450 400 5 5 10 2 40 V V V .cn mi e A A IB Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC W Tj 175 Tstg Storage Temperature Range -65~175 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2247 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 100mA; L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V hFE DC Current Gain IC= 2A; VCE= 5V VCB= 450V; IE= 0 TC=125 10 1.0 4.0 5.0 ICBO Collector Cutoff Current mA ICEO Collector Cutoff Current VCE= 400V; IB= 0 IEBO Emitter Cutoff Current Switching Times tr Rise Time tstg Storage Time w w scs .i w VEB= 5V; IC= 0 .cn mi e mA 1.0 mA 1.0 s IC=2A; IB1=- IB2= 0.4A 2.0 s tf Fall Time 1.0 s isc Websitewww.iscsemi.cn |
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